EN25QH32
Table 9. Parameter ID (0) (Advanced Information) 1/9
Address (h)
Description
Address
(Bit)
Data
Comment
(Byte Mode)
00 = reserved
01 = 4KB erase
10 = reserved
11 = 64KB erase
00
01
Block / Sector Erase sizes
Identifies the erase granularity for all Flash
Components
01b
Write Granularity
Write Enable Instruction Required for
Writing to Volatile Status Register
02
03
1b
0 = No, 1 = Yes
30h
00 = N/A
01 = use 50h opcode
11 = use 06h opcode
00b
Write Enable Opcode Select for Writing to
Volatile Status Register
04
05
06
07
08
09
10
11
12
13
14
15
Unused
111b
20h
Reserved
4 KB Erase Support
(FFh = not supported)
4 Kilo-Byte Erase Opcode
31h
Supports (1-1-2) Fast Read
Device supports single input opcode & address
and quad output data Fast Read
0 = not supported
1 = supported
16
17
1b
00 = 3-Byte
01 = 3- or 4-Byte (e.g.
defaults to 3-Byte
mode; enters 4-Byte
mode on command)
10 = 4-Byte
Address Byte
Number of bytes used in addressing for flash arra
write and erase.
00b
18
19
11 = reserved
Supports Double Transfer Rate (DTR)
Clocking
Indicates the device supports some type of
double transfer rate clocking.
0 = not supported
1 = supported
0b
32h
Supports (1-2-2) Fast Read
0 = not supported
1 = supported
20
21
22
1b
1b
Device supports single input opcode, dual input
address, and quad output data Fast Read
Supports (1-4-4) Fast Read
Device supports single input opcode, quad input
address, and quad output data Fast Read
Supports (1-1-4) Fast Read
Device supports single input opcode & address
and quad output data Fast Read
Unused
0 = not supported
1 = supported
0 = not supported
1 = supported
0b
1b
23
24
25
26
27
28
29
30
31
Reserved
Unused
33h
FFh
Reserved
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
46
Rev. E, Issue Date: 2012/01/30
EON [ EON SILICON SOLUTION INC. ]
