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EN25QH32-104QIP 参数 Datasheet PDF下载

EN25QH32-104QIP图片预览
型号: EN25QH32-104QIP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位串行闪存与4K字节扇区制服 [32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 63 页 / 1168 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25QH32  
Read SFDP Mode and Unique ID Number (5Ah)  
Read SFDP Mode  
EN25QH32 features Serial Flash Discoverable Parameters (SFDP) mode. Host system can retrieve the  
operating characteristics, structure and vendor specified information such as identifying information,  
memory size, operating voltage and timing information of this device by SFDP mode.  
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read SFDP  
Mode is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the  
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial  
Data Output (DO), each bit being shifted out, at a maximum frequency FR, during the falling edge of  
Serial Clock (CLK).  
The instruction sequence is shown in Figure 27. The first byte addressed can be at any location. The  
address is automatically incremented to the next higher address after each byte of data is shifted out.  
The whole memory can, therefore, be read with a single Serial Flash Discoverable Parameters (SFDP)  
instruction. When the highest address is reached, the address counter rolls over to 0x00h, allowing the  
read sequence to be continued indefinitely. The Serial Flash Discoverable Parameters (SFDP)  
instruction is terminated by driving Chip Select (CS#) High. Chip Select (CS#) can be driven High at  
any time during data output. Any Read Data Bytes at Serial Flash Discoverable Parameters (SFDP)  
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects  
on the cycle that is in progress.  
Figure 27. Read SFDP Mode and Unique ID Number Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
44  
Rev. E, Issue Date: 2012/01/30  
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