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EN25Q16A-104HIP 参数 Datasheet PDF下载

EN25Q16A-104HIP图片预览
型号: EN25Q16A-104HIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存与4K字节扇区制服 [16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 53 页 / 1059 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25Q16A  
Dual Input / Output FAST_READ (BBh)  
The Dual I/O Fast Read (BBh) instruction allows for improved random access while maintaining two IO  
pins, DQ0 and DQ1. It is similar to the Dual Output Fast Read (3Bh) instruction but with the capability to  
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code  
execution (XIP) directly from the Dual SPI in some applications.  
The Dual I/O Fast Read instruction enable double throughput of Serial Flash in read mode. The  
address is latched on rising edge of CLK, and data of every two bits (interleave 2 I/O pins) shift out on  
the falling edge of CLK at a maximum frequency. The first address can be at any location. The address  
is automatically increased to the next higher address after each byte data is shifted out, so the whole  
memory can be read out at a single Dual I/O Fast Read instruction. The address counter rolls over to 0  
when the highest address has been reached. Once writing Dual I/O Fast Read instruction, the following  
address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in Figure 14.  
Figure 14. Dual Input / Output Fast Read Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
24  
Rev. E, Issue Date: 2011/07/14  
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