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EN25Q16A-104HIP 参数 Datasheet PDF下载

EN25Q16A-104HIP图片预览
型号: EN25Q16A-104HIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存与4K字节扇区制服 [16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 53 页 / 1059 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25Q16A  
Dual Output Fast Read (3Bh)  
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that  
data is output on two pins, DQ0 and DQ1, instead of just DQ0. This allows data to be transferred from  
the EN25Q16A at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is  
ideal for quickly downloading code from to RAM upon power-up or for applications that cache code-  
segments to RAM for execution.  
Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the highest  
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight  
“dummy clocks after the 24-bit address as shown in figure 13. The dummy clocks allow the device’s  
internal circuits additional time for setting up the initial address. The input data during the dummy clock  
is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of the first data  
out clock.  
Figure 13. Dual Output Fast Read Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
23  
Rev. E, Issue Date: 2011/07/14  
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