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EN25Q16A-104HIP 参数 Datasheet PDF下载

EN25Q16A-104HIP图片预览
型号: EN25Q16A-104HIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存与4K字节扇区制服 [16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 53 页 / 1059 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25Q16A  
Figure 10. Write Status Register Instruction Sequence Diagram  
Figure 10.1 Write Status Register Instruction Sequence under EQPI Mode  
Read Data Bytes (READ) (03h)  
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data  
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the  
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial  
Data Output (DO), each bit being shifted out, at a maximum frequency f , during the falling edge of  
R
Serial Clock (CLK).  
The instruction sequence is shown in Figure 11. The first byte addressed can be at any location. The  
address is automatically incremented to the next higher address after each byte of data is shifted out.  
The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When  
the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence  
to be continued indefinitely.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
20  
Rev. E, Issue Date: 2011/07/14  
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