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EN25F05-75VIP 参数 Datasheet PDF下载

EN25F05-75VIP图片预览
型号: EN25F05-75VIP
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的串行闪存与4KB的部门统一 [512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 31 页 / 422 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F05  
and other instructions will be accepted. The CS# pin must remain high during the t  
RES1  
time  
duration.  
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated  
by driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The  
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as  
shown in Figure 17. The Device ID value for the EN25F05 are listed in Table 5. The Device ID can  
be read continuously. The instruction is completed by driving CS# high.  
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device  
was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is  
immediate. If the device was previously in the Deep Power-down mode, though, the transition to the  
Standby Power mode is delayed by t  
, and Chip Select (CS#) must remain High for at least  
RES2  
t
(max), as specified in Table 10. Once in the Stand-by Power mode, the device waits to be  
RES2  
selected, so that it can receive, decode and execute instructions.  
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from  
Deep Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device  
ID of the device, and can be applied even if the Deep Power-down mode has not been entered.  
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program  
or Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in  
progress.  
Figure 16. Release Power-down Instruction Sequence Diagram  
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
18  
Rev. B, Issue Date: 2008/06/23  
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