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EN25F05-75VIP 参数 Datasheet PDF下载

EN25F05-75VIP图片预览
型号: EN25F05-75VIP
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的串行闪存与4KB的部门统一 [512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 31 页 / 422 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F05  
Figure 13 Block Erase Instruction Sequence Diagram  
Chip Erase (CE) (C7h/60h)  
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable  
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction  
has been decoded, the device sets the Write Enable Latch (WEL).  
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the  
instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire  
duration of the sequence.  
The instruction sequence is shown in Figure 14. Chip Select (CS#) must be driven High after the  
eighth bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not  
executed. As soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose  
duration is t ) is initiated. While the Chip Erase cycle is in progress, the Status Register may be  
CE  
read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1  
during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time  
before the cycle is completed, the Write Enable Latch (WEL) bit is reset.  
The Chip Erase (CE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The  
Chip Erase (CE) instruction is ignored if one, or more, sectors are protected.  
Figure 14. Chip Erase Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
16  
Rev. B, Issue Date: 2008/06/23