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EN25F40-75VC 参数 Datasheet PDF下载

EN25F40-75VC图片预览
型号: EN25F40-75VC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与4KB的扇区制服 [4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 33 页 / 462 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F40  
Power-down  
Manufacturer/  
Device ID  
90h  
(5)  
00h  
dummy  
dummy  
(M7-M0)  
(ID7-ID0)  
(ID15-ID8)  
(ID7-ID0)  
(M7-M0)  
Read Identification  
Enter OTP mode  
9Fh  
3Ah  
Notes:  
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from  
the device on the DO pin.  
2. The Status Register contents will repeat continuously until CS# terminate the instruction.  
3. All sectors may use any address within the sector.  
4. The Device ID will repeat continuously until CS# terminate the instruction.  
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.  
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.  
Table 5. Manufacturer and Device Identification  
OP Code  
(M7-M0)  
(ID15-ID0)  
(ID7-ID0)  
ABh  
12h  
90h  
1Ch  
1Ch  
12h  
9Fh  
3113h  
Write Enable (WREN) (06h)  
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable  
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip  
Erase (CE) and Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction  
code, and then driving Chip Select (CS#) High.  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to  
a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip Select  
(CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#) high. Note  
that the WEL bit is automatically reset after Power-up and upon completion of the Write Status Register,  
Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
9
Rev. B, Issue Date: 2007/05/09  
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