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EN25F40-75VC 参数 Datasheet PDF下载

EN25F40-75VC图片预览
型号: EN25F40-75VC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与4KB的扇区制服 [4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 33 页 / 462 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F40  
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth  
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not  
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration  
is t ) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check  
SE  
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed  
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,  
the Write Enable Latch (WEL) bit is reset.  
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP2, BP1,  
BP0) bits (see Table 3) is not executed.  
Block Erase (BE) (D8h/52h)  
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be accepted,  
a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN)  
instruction has been decoded, the device sets the Write Enable Latch (WEL).  
The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction  
code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see Table 2) is a  
valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low for the entire  
duration of the sequence.  
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth  
bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not executed.  
As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose duration is t ) is  
SE  
initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of  
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase  
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write  
Enable Latch (WEL) bit is reset.  
A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP2, BP1, BP0)  
bits (see Table 3) is not executed.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
15  
Rev. B, Issue Date: 2007/05/09  
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