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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
Figure 10. Fast Read Instruction Sequence Diagram  
Dual Output Fast Read (3Bh)  
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that  
data is output on two pins, DO and DI, instead of just DO. This allows data to be transferred from the  
EN25D16 at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is ideal  
for quickly downloading code from to RAM upon power-up or for applications that cache code-  
segments to RAM for execution.  
Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the  
highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by  
adding eight “dummy clocks after the 24-bit address as shown in figure 11. The dummy clocks allow  
the device’s internal circuits additional time for setting up the initial address. The input data during  
the dummy clock is “don’t care”. However, the DI pin should be high-impedance prior to the falling  
edge of the first data out clock.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
16  
Rev. B, Issue Date: 2008/06/23  
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