EN25D16
Figure 11. Dual Output Fast Read Instruction Sequence Diagram
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 12. If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed
correctly within the same page. If less than 256 Data bytes are sent to device, they are correctly pro-
grammed at the requested addresses without having any effects on the other bytes of the same
page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is
t
) is initiated. While the Page Program cycle is in progress, the Status Register may be read to
PP
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2,
BP1, BP0) bits (see Table 3) is not executed.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
17
Rev. B, Issue Date: 2008/06/23
EON [ EON SILICON SOLUTION INC. ]
