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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status  
Register to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by  
driving Chip Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip  
Select (CS#) high. Note that the WEL bit is automatically reset after Power-up and upon completion  
of the Write Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase  
instructions.  
Figure 6. Write Disable Instruction Sequence Diagram  
Read Status Register (RDSR) (05h)  
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register  
may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress.  
When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit  
before sending a new instruction to the device. It is also possible to read the Status Register continuously,  
as shown in Figure 7.  
Figure 7. Read Status Register Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
12  
Rev. B, Issue Date: 2008/06/23