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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
(4)  
Release from Deep  
Power-down, and  
read Device ID  
Release from Deep  
Power-down  
dummy  
dummy  
dummy  
dummy (ID7-ID0)  
ABh  
90h  
Manufacturer/  
Device ID  
(5)  
00h  
dummy  
(M7-M0)  
(ID7-ID0)  
(ID15-  
ID8)  
(ID7-  
ID0)  
Read Identification  
Enter OTP mode  
9Fh  
3Ah  
(M7-M0)  
Notes:  
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from  
the device on the DO pin.  
2. The Status Register contents will repeat continuously until CS# terminate the instruction.  
3. All sectors may use any address within the sector.  
4. The Device ID will repeat continuously until CS# terminate the instruction.  
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.  
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.  
Table 5. Manufacturer and Device Identification  
OP Code  
ABh  
(M7-M0)  
(ID15-ID0)  
(ID7-ID0)  
14h  
90h  
1Ch  
1Ch  
14h  
9Fh  
3015h  
Write Enable (WREN) (06h)  
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write  
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block  
Erase (BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the  
instruction code, and then driving Chip Select (CS#) High.  
Figure 5. Write Enable Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
11  
Rev. B, Issue Date: 2008/06/23  
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