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EM39LV040-70FMC 参数 Datasheet PDF下载

EM39LV040-70FMC图片预览
型号: EM39LV040-70FMC
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ( 512Kx8 )位闪存 [4M (512Kx8) Bits Flash Memory]
分类和应用: 闪存
文件页数/大小: 21 页 / 381 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV040  
4M (512Kx8) Bits Flash Memory  
SPECIFICATION  
AC Characteristics  
Read Cycle Timing Parameters  
45REC  
55REC  
70REC  
90REC  
Symbol  
Parameter  
Unit  
Min Max Min Max Min Max Min Max  
TRC  
TCE  
TAA  
TOE  
Read Cycle Time  
45  
55  
70  
0
90  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Enable Access Time  
Address Access Time  
45  
45  
30  
55  
55  
30  
70  
70  
35  
90  
90  
45  
Output Enable Access Time  
CE# Low to Active Output  
OE# Low to Active Output  
CE# High to High-Z Output  
OE# High to High-Z Output  
Output Hold from Address Change  
*
TCLZ  
0
0
0
0
0
0
0
0
*
TOLZ  
*
TCHZ  
15  
15  
15  
15  
25  
25  
30  
30  
*
TOHZ  
*
TOH  
0
0
0
0
*This parameter is measured only for initial qualification and after a design or process change that  
could affect this parameter.  
Table 9: Read Cycle Timing Parameters  
Program/Erase Cycle Timing Parameter  
Symbol  
TBP  
Parameter  
Min  
Max  
Unit  
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
ms  
Byte-Program Time  
16  
TAS  
Address Setup Time  
Address Hold Time  
WE# and CE# Setup Time  
WE# and CE# Hold Time  
OE# High Setup Time  
OE# High Hold Time  
CE# Pulse Width  
0
30  
0
TAH  
TCS  
TCH  
0
TOES  
TOEH  
TCP  
0
10  
40  
40  
30  
30  
40  
0
TWP  
WE# Pulse Width  
*
TWPH  
WE# Pulse Width High  
CE# Pulse Width High  
Data Setup Time  
*
TCPH  
TDS  
*
TDH  
Data Hold Time  
*
TIDA  
Software ID Access and Exit Time  
Sector Erase  
150  
60  
TSE  
TSCE  
Chip Erase  
60  
*This parameter is measured only for initial qualification and after a design or process change that  
could affect this parameter.  
Table 10: Program/Erase Cycle Timing Parameter  
This specification is subject to change without further notice. (07.22.2004 V1.0)  
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