EM39LV040
4M (512Kx8) Bits Flash Memory
SPECIFICATION
AC Characteristics
Read Cycle Timing Parameters
45REC
55REC
70REC
90REC
Symbol
Parameter
Unit
Min Max Min Max Min Max Min Max
TRC
TCE
TAA
TOE
Read Cycle Time
45
55
70
0
90
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable Access Time
Address Access Time
45
45
30
55
55
30
70
70
35
90
90
45
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
*
TCLZ
0
0
0
0
0
0
0
0
*
TOLZ
*
TCHZ
15
15
15
15
25
25
30
30
*
TOHZ
*
TOH
0
0
0
0
*This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 9: Read Cycle Timing Parameters
Program/Erase Cycle Timing Parameter
Symbol
TBP
Parameter
Min
Max
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Byte-Program Time
16
TAS
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
0
30
0
TAH
TCS
TCH
0
TOES
TOEH
TCP
0
10
40
40
30
30
40
0
TWP
WE# Pulse Width
*
TWPH
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
*
TCPH
TDS
*
TDH
Data Hold Time
*
TIDA
Software ID Access and Exit Time
Sector Erase
150
60
TSE
TSCE
Chip Erase
60
*This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 10: Program/Erase Cycle Timing Parameter
This specification is subject to change without further notice. (07.22.2004 V1.0)
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