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EDS2516APTA-7AL 参数 Datasheet PDF下载

EDS2516APTA-7AL图片预览
型号: EDS2516APTA-7AL
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 553 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDS2516APTA-7AL的Datasheet PDF文件第31页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第32页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第33页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第34页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第36页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第37页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第38页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第39页  
EDS2504ACTA/08ACTA/16ACTA, EDS2504APTA/08APTA/16APTA  
Read with auto precharge to Read command interval  
1. Different bank: When some banks are in the active state, the second read command (another bank) is executed.  
Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by the second  
command is valid. The internal auto-precharge of one bank starts at the next clock of the second command.  
CLK  
Command  
BS  
READA  
READ  
DQ  
out A0  
out A1  
out B0  
out B1  
bank0  
Read A  
bank3  
Read  
CL= 3  
BL = 4  
Note: Internal auto-precharge starts at the timing indicated by "  
Read with Auto Precharge to Read Command Interval (Different bank)  
2. Same bank: The consecutive read command (the same bank) is illegal.  
Write with auto precharge to Write command interval  
".  
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed.  
In the case of burst writes, the second write command has priority. The internal auto-precharge of one bank  
starts 2 clocks later from the second command.  
CLK  
Command  
BS  
WRITA  
in A0  
WRIT  
in B0  
DQ  
in A1  
in B1  
in B2  
".  
in B3  
bank0  
Write A  
bank3  
Write  
BL= 4  
Note: Internal auto-precharge starts at the timing indicated by "  
Write with Auto Precharge to Write Command Interval (Different bank)  
2. Same bank: The consecutive write command (the same bank) is illegal.  
Data Sheet E0110E30 (Ver. 3.0)  
35  
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