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EDS2516APTA-7AL 参数 Datasheet PDF下载

EDS2516APTA-7AL图片预览
型号: EDS2516APTA-7AL
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 553 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDS2516APTA-7AL的Datasheet PDF文件第28页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第29页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第30页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第31页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第33页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第34页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第35页浏览型号EDS2516APTA-7AL的Datasheet PDF文件第36页  
EDS2504ACTA/08ACTA/16ACTA, EDS2504APTA/08APTA/16APTA  
Write command to Write command interval  
1. Same bank, same ROW address: When another write command is executed at the same ROW address of the  
same bank as the preceding write command, the second write can be performed after an interval of no less than  
1 clock. In the case of burst writes, the second write command has priority.  
CLK  
Command  
Address  
WRIT  
ACT  
Row  
WRIT  
Column B  
Column A  
BS  
DQ  
in A0  
in B2 in B3  
in B0 in B1  
Bank0  
Active  
Column =A Column =B  
Write Write  
Burst Write Mode  
BL = 4  
Bank 0  
WRITE to WRITE Command Interval (same ROW address in same bank)  
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be  
executed; it is necessary to separate the two write commands with a precharge command and a bank active  
command.  
3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1  
clock, provided that the other bank is in the bank active state. In the case of burst write, the second write  
command has priority.  
CLK  
Command  
Address  
ACT  
WRIT WRIT  
ACT  
Column A  
Column B  
Row 1  
Row 0  
BS  
DQ  
in A0  
in B2 in B3  
in B0 in B1  
Burst Write Mode  
BL = 4  
Bank0  
Active  
Bank3 Bank0 Bank3  
Active Write Write  
WRITE to WRITE Command Interval (different bank)  
Data Sheet E0110E30 (Ver. 3.0)  
32  
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