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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
[Self-Refresh Mode Summary]  
MR2  
Allowed operating temperature range  
for self-refresh mode  
A6  
0
A7  
0
Self-refresh operation  
Self-refresh rate appropriate for the Normal Temperature Range  
Normal (0°C to +85°C)  
Self-refresh rate appropriate for either the Normal or Extended  
Temperature Ranges. The DRAM must support Extended  
Temperature Range. The value of the SRT bit can effect self-  
refresh power consumption, please refer to the Self- refresh  
Current for details.  
ASR enabled (for devices supporting ASR and Normal  
Temperature Range). Self-refresh power consumption is  
temperature dependent  
0
1
1
0
Normal and Extended (0°C to +95°C)  
Normal (0°C to +85°C)  
ASR enabled (for devices supporting ASR and Extended  
Temperature Range). Self-refresh power consumption is  
temperature dependent  
1
1
0
1
Normal and Extended (0°C to +95°C)  
Illegal  
Dynamic ODT (Rtt_WR)  
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal  
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without  
issuing an MRS command. MR2 register locations A9 and A10 configure the Dynamic ODT settings. In Write  
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.  
Data Sheet E1248E40 (Ver. 4.0)  
89  
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