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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
Write Leveling Procedure  
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. Since the controller levelizes  
rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT  
after tMOD, time at which DRAM is ready to accept the ODT signal.  
Controller may drive DQS low and /DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die  
termination on these signals. After tWLMRD, controller provides a single DQS, /DQS edge which is used by the  
DRAM to sample CK driven from controller. tWLMRD timing is controller dependent.  
DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after  
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read  
strobes (DQS, /DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or  
decrement DQS delay setting and launches the next DQS, /DQS pulse after some time, which is controller  
dependent.  
Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the  
device. The below figure describes detailed timing diagram for overall procedure and the timing parameters are  
shown in below figure.  
T2  
T1  
tWLS  
tWLS  
tWLH  
tWLH  
NOP  
5
*
CK  
/CK  
2
3
4
2
3
*
*
*
*
*
Command MRS  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
tMOD  
6
6
*
*
ODT  
tDQSH (min.)  
tDQSL (min.) tDQSH (min.) tDQSL (min.)  
tWLDQSEN  
diff_DQS*4  
tWLOE  
tWLO  
tWLMRD  
tWLO  
All DQs,  
Prime DQ*1  
Remaining  
DQs  
Notes:1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ,  
the remaining DQs must be driven low as shown in above Figure, and maintained at this state through out  
the leveling procedure.  
2. MRS : Load MR1 to enter write leveling mode.  
3. NOP : NOP or deselec  
4. diff_DQS is the differential data strobe (DQS, /DQS). Timing reference points are the zero crossing. DQS is  
shown with solid line, /DQS is shown with dotted line.  
5. CK, /CK : CK is shown with solid dark line, where as /CK is drawn with dotted line.  
6. DQS needs to fulfill minimum pulse width requirements tDQSH (min.) and tDQSL (min.) as defined for regular  
writes; the max pulse width is system dependent.  
Timing Details Write leveling Sequence  
Data Sheet E1248E40 (Ver. 4.0)  
85  
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