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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
TDQS, /TDQS function (MR1)  
TDQS (Termination Data Strobe) is a feature of ×8 DDR3 SDRAM that provides additional termination resistance  
outputs that may be useful in some system configurations.  
TDQS is not supported in ×16 configurations. When enabled via the mode register, the same termination resistance  
function is applied to the TDQS and /TDQS pins that are applied to the DQS and /DQS pins.  
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The  
data strobe function of RDQS is not provided by TDQS.  
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM  
function is not supported. When the TDQS function is disabled, the DM function is provided and the /TDQS pin is  
not used. See Table TDQS, /TDQS function for details.  
The TDQS function is available in ×8 DDR3 SDRAM only and must be disabled via the mode register A11 = 0 in  
MR1 for ×16 configurations.  
[TDQS, /TDQS function]  
A11@MR1  
TDQS enable  
Disable  
0
1
Enable  
Notes: 1. If TDQS is enabled, the DM function is disabled.  
2. When not used, TDQS function can be disabled to save termination power  
3. TDQS function is only available for ×8 DRAM and must be disabled for ×16  
[Function matrix]  
A11@MR1 (TDQS enable)  
DM/TDQS  
DM  
NU/ /TDQS  
High-Z  
0
1
TDQS  
/TDQS  
Data Sheet E1248E40 (Ver. 4.0)  
87  
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