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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
Power-Down Mode  
Power-down is synchronously entered when CKE is registered low (along with NOP or DESL command). CKE is not  
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write  
operation are in progress. CKE is allowed to go low while any of other operations such as row activation, precharge  
or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those  
operations.  
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is  
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation  
and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well  
proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM  
specifications.  
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in  
precharge power-down mode; if any bank is open after in-progress commands are completed, the device will be in  
active power-down mode.  
Entering power-down deactivates the input and output buffers, excluding CK, /CK, ODT, CKE and /RESET. To  
protect DRAM internal delay on CKE line to block the input signals, multiple NOP or DESL commands are needed  
during the CKE switch off and cycle(s) after this timing period are defined as tCPDED. CKE_low will result in  
deactivation of command and address receivers after tCPDED has expired.  
[Power-Down Entry Definitions]  
Status of DRAM  
MR0 bit A12  
DLL  
On  
PD Exit  
Fast  
Relevant Parameters  
Active  
(A bank or more Open)  
Don’t Care  
tXP to any valid command  
tXP to any valid command. Since it is in  
precharge state, commands here will be ACT,  
AR, MRS, PRE or PALL .  
Precharged  
0
1
Off  
On  
Slow  
Fast  
(All banks Precharged)  
tXPDLL to commands who need DLL to operate,  
such as READ, READA or ODT control line.  
Precharged  
(All Banks Precharged)  
tXP to any valid command  
Also the DLL is disabled upon entering precharge power-down for slow exit mode, but the DLL is kept enabled  
during precharge power-down for fast exit mode or active power-down. In power-down mode, CKE low, RESET high  
and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state  
but all other input signals are “Don’t Care” (If RESET goes low during power-down, the DRAM will be out of PD  
mode and into reset state). CKE low must be maintained until tPD has been satisfied. Power-down duration is  
limited by 9 times tREFI of the device.  
The power-down state is synchronously exited when CKE is registered high (along with a NOP or DESL command).  
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with  
power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC  
Characteristics table of this data sheet.  
Data Sheet E1248E40 (Ver. 4.0)  
122  
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