EDJ1108BABG, EDJ1116BABG
Write Data Mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR3 SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to ensure matched system timing. DM is not
used during read cycles.
T1
T2
T3
T4
T5
T6
DQS
/DQS
DQ
DM
in
in
in
in
in
in
in
in
Write mask latency = 0
Data Mask Timing
/CK
CK
[tDQSS(min.)]
tWR
WRIT
Command
NOP
WL
tDQSS
DQS, /DQS
DQ
in0
in2 in3
DM
WL
tDQSS
[tDQSS(max.)]
DQS, /DQS
DQ
in0
in2 in3
DM
Data Mask Function, WL = 5, AL = 0 shown
Data Sheet E1248E40 (Ver. 4.0)
117
ELPIDA [ ELPIDA MEMORY ]
