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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
IDD1 Measurement-Loop Pattern  
CK,  
/CK  
Sub Cycle  
Com-  
A11  
A7  
A3  
A0  
Data*2  
CKE  
-Loop number mand /CS /RAS /CAS /WE ODT BA*3 -A13 A10 -A9 -A6 -A2  
0
ACT  
D, D  
0
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00  
00  
00  
0
0
0
0
0
0
0
0
0
0
0
0
1, 2  
3, 4  
/D, /D 1  
Repeat pattern 1...4 until nRCD 1, truncate if necessary  
READ 0 00  
Repeat pattern 1...4 until nRAS 1, truncate if necessary  
nRCD  
1
0
1
0
0
0
0
0
0
0
0
00000000  
nRAS  
PRE  
0
0
1
0
0
0
00  
0
0
Repeat pattern 1...4 until nRC 1, truncate if necessary  
1 × nRC  
ACT  
D, D  
0
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00  
00  
00  
0
0
0
0
0
0
F
F
F
0
0
0
+ 0  
0
1 × nRC  
+ 1, 2  
1 × nRC  
+ 3, 4  
/D, /D 1  
Toggling Static H  
...  
Repeat pattern nRC + 1,..., 4 until nRC + nRCD 1, truncate if necessary  
READ 0 00  
Repeat pattern nRC + 1,..., 4 until nRC +nRAS 1, truncate if necessary  
PRE 00  
Repeat pattern nRC + 1,..., 4 until 2 * nRC 1, truncate if necessary  
1 × nRC  
+ nRCD  
...  
1 × nRC  
+ nRAS  
1
0
1
0
0
0
0
F
0
00110011  
0
0
1
0
0
0
0
0
F
0
1
2
3
4
5
6
7
2 × nRC Repeat Sub-Loop 0, use BA= 1 instead  
4 × nRC Repeat Sub-Loop 0, use BA= 2 instead  
6 × nRC Repeat Sub-Loop 0, use BA= 3 instead  
8 × nRC Repeat Sub-Loop 0, use BA= 4 instead  
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead  
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead  
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead  
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise  
FLOATING.  
2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals  
are FLOATING.  
3. BA: BA0 to BA2.  
Data Sheet E1375E50 (Ver. 5.0)  
39  
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