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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
Parameter  
Symbol  
IDD3N  
Description  
CKE: H; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ  
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, Address, Bank Address Inputs: partially toggling according to IDD2N  
and IDD3N Measurement-Loop Pattern; data I/O: FLOATING; DM: stable at 0;  
bank activity: all banks open; output buffer and RTT: enabled in MR*2;  
ODT signal: stable at 0; pattern details: see IDD2N and IDD3N  
Measurement-Loop Pattern table  
Active standby current  
CKE: L; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ  
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, Address, bank address inputs: stable at 0; data I/O: FLOATING;  
DM:stable at 0; bank activity: all banks open; output buffer and RTT:  
enabled in MR*2; ODT signal: stable at 0  
Active power-down  
current  
IDD3P  
IDD4R  
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ  
Measurement-Loop Patterns table; BL: 8*1, 7; AL: 0; /CS: H between  
READ; Command, Address, Bank Address Inputs: partially toggling according to  
IDD4R and IDDQ4R Measurement-Loop Pattern table; data I/O: seamless read  
data burst with different data between one burst and the next one according to  
IDD4R and IDDQ4R Measurement-Loop Pattern table; DM: stable at 0;  
bank activity: all banks open, READ commands cycling through banks:  
0,0,1,1,2,2,... (see IDD4R and IDDQ4R Measurement-Loop Pattern table); output  
buffer and  
Operating burstr  
current  
RTT: enabled in MR*2; ODT signal: stable at 0; pattern details: see IDD4R and  
IDDQ4R Measurement-Loop Pattern table  
Operating burst read  
IDDQ current  
Same definitI/on like for IDD4R, however measuring IDDQ current instead of IDD  
IDDQ4R  
IDD4W  
current  
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ  
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: H between WR; command,  
address, bank address inputs: partially toggling according to IDD4W  
Measurement-Loop Pattern table; data I/O: seamless write data burst with  
different data between one burst and the next one according to IDD4W  
Measurement-Loop Pattern table; DM: stable at 0; bank activity: all banks open,  
WR commands cycling through banks: 0,0,1,1,2,2,... (see IDD4W Measurement-  
Loop Pattern table); output buffer and RTT: enabled in MR*2; ODT signal: stable  
at H; pattern details: see IDD4W Measurement-Loop Pattern table  
Operating burst write  
current  
CKE: H; External clock: on; tCK, CL, nRFC: see Timings used for IDD and IDDQ  
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: H between REF;  
Command, Address, Bank Address Inputs: partially toggling according to IDD5B  
Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable at 0;  
bank activity: REF command every nRFC (IDD5B Measurement-Loop Pattern);  
output buffer and RTT: enabled in MR*2; ODT signal: stable at 0; pattern  
details: see IDD5B Measurement-Loop Pattern table  
Burst refresh current  
IDD5B  
IDD6  
TC: 0 to 85°C; ASR: disabled*4; SRT:  
Normal*5; CKE: L; External clock: off; CK and /CK: L; CL: see Timings used for  
IDD and IDDQ Measurement-Loop Patterns table; BL: 8*1;  
AL: 0; /CS, command, address, bank address, data I/O: FLOATING; DM: stable  
at 0; bank activity: Self-Refresh operatI/On; output buffer and RTT: enabled in  
MR*2; ODT signal: FLOATING  
Self refresh current:  
normal temperature  
range  
Data Sheet E1375E50 (Ver. 5.0)  
36  
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