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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
/CK  
CK  
Posted  
READ  
NOP  
Command  
<tDQSCK  
=
DQS, /DQS  
AL = 2  
CL = 3  
RL = 5  
out0 out1 out2 out3  
DQ  
Burst Read Operation (RL = 5, BL = 4 (AL = 2, CL = 3))  
T0  
T1  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
/CK  
CK  
Posted  
READ  
Posted  
WRIT  
NOP  
NOP  
NOP  
Command  
tRTW (Read to Write = 4 clocks)  
DQS, /DQS  
RL = 5  
WL = RL - 1 = 4  
out0 out1 out2 out3  
in0  
in1  
in2  
in3  
DQ  
Burst Read Followed by Burst Write (RL = 5, WL = RL-1 = 4, BL = 4)  
The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-  
around-time, which is 4 clocks.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
/CK  
CK  
Posted  
READ  
Posted  
READ  
NOP  
NOP  
Command  
A
B
DQS, /DQS  
AL = 2  
CL = 3  
RL = 5  
out out out out out out out  
A0 A1 A2 A3 B0 B1 B2  
DQ  
Seamless Burst Read Operation (RL = 5, AL = 2, and CL = 3)  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
41  
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