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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
ODT(On Die Termination)  
On Die Termination (ODT), is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQS,  
/DQS, RDQS, /RDQS, and DM signal via the ODT control pin. The ODT feature is designed to improve signal  
integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination resistance  
for any or all DRAM devices.  
The ODT function is turned off and not supported in self-refresh mode.  
VDDQ  
VDDQ  
VDDQ  
sw1  
sw2  
sw3  
Rval1  
Rval2  
Rval3  
DRAM  
input  
buffer  
Input  
Pin  
Rval1  
Rval2  
Rval3  
sw1  
sw2  
sw3  
VSSQ  
VSSQ  
VSSQ  
Switch sw1, sw2 or sw3 is enabled by ODT pin.  
Selection between sw1, sw2 or sw3 is determined by Rtt (nominal) in EMRS  
Termination included on all DQs, DM, DQS, /DQS, RDQS and /RDQS pins.  
Target Rtt () = (Rval1) / 2, (Rval2) / 2 or (Rval3) / 2  
Functional Representation of ODT  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
33  
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