欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第25页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第26页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第27页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第28页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第30页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第31页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第32页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第33页  
EDE5104AGSE, EDE5108AGSE  
DLL Enable/Disable  
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon  
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self-  
refresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled  
(and subsequently reset), 200 clock cycles must occur before a read command can be issued to allow time for the  
internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a  
violation of the tAC or tDQSCK parameters.  
EMRS(2) Programming*1  
The extended mode register (2) controls refresh related features. The default value of the extended mode register  
(2) is not defined, therefore the extended mode register (2) must be written after power-up for proper operation. The  
extended mode register (2) is written by asserting low on CS, /RAS, /CAS, /WE, high on BA1 and low on BA0, while  
controlling the states of address pins A0 to A13. The DDR2 SDRAM should be in all bank precharge with CKE  
already high prior to writing into the extended mode register (2). The mode register set command cycle time (tMRD)  
must be satisfied to complete the write operation to the extended mode register (2). Mode register contents can be  
changed using the same command and clock cycle requirements during normal operation as long as all banks are in  
the precharge state.  
Address field  
BA1 BA0 A13  
A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Extended mode register (2)  
1
1
1
0
SRF  
0*  
0*  
High Temperature  
Self-refresh rate  
Enable  
A7  
0
1
Disable  
Enable (Optional)  
Note: 1 The rest bits in EMRS (2) is reserved for future use and all bits in EMRS (2) except A7, BA0 and BA1  
must be programmed to 0 when setting the extended mode register (2) during initialization.  
EMRS(2)  
EMRS(3) Programming: Reserved*1  
Address Field  
BA1 BA0 A13  
A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Extended Mode Register(3)  
0*1  
1
1
Note : 1. EMRS (3) is reserved for future use and all bits except BA0 and BA1 must be programmed  
to 0 when setting the mode register during initialization.  
EMRS(3)  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
29  
 复制成功!