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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
For proper operation of adjust mode, WL = RL 1 = AL + CL 1 clocks and tDS/tDH should be met as the Output  
Impedance Control Register Set Cycle. For input data pattern for adjustment, DT0 to DT3 is a fixed order and not  
affected by MRS addressing mode (i.e. sequential or interleave).  
/CK  
CK  
Command  
EMRS  
NOP  
EMRS  
NOP  
WL  
tWR  
DQS, /DQS  
tDS tDH  
DT0  
DQ_in  
DT1  
DT2  
DT3  
OCD adjust mode  
OCD calibration mode exit  
Output Impedance Control Register Set Cycle  
Drive Mode  
Drive mode, both drive (1) and drive (0), is used for controllers to measure DDR2 SDRAM Driver impedance before  
OCD impedance adjustment. In this mode, all outputs are driven out tOIT after “Enter drive mode” command and all  
output drivers are turned-off tOIT after “OCD calibration mode exit” command as the ”Output Impedance  
Measurement/Verify Cycle”.  
/CK  
CK  
Command  
EMRS  
NOP  
EMRS  
High-Z  
High-Z  
DQS, /DQS  
DQs high and /DQS low for drive (1), DQs low and /DQS high for drive (0)  
DQs high for drive (1)  
DQs low for drive (0)  
DQ  
tOIT  
tOIT  
Enter drivemode  
OCD Calibration mode exit  
Output Impedance Measurement/Verify Cycle  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
32  
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