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EDE1104ACSE-5C-E 参数 Datasheet PDF下载

EDE1104ACSE-5C-E图片预览
型号: EDE1104ACSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 82 页 / 782 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1104ACSE, EDE1108ACSE, EDE1116ACSE  
-5C  
Speed bin  
Parameter  
DDR2-533 (4-4-4)  
Symbol  
tRRD  
tRRD  
tFAW  
min.  
7.5  
max.  
Unit  
ns  
Notes  
Active bank A to active bank B command period  
(EDE1104AC, EDE1108AC)  
(EDE1116AC)  
10  
ns  
Four active window period  
(EDE1104AC, EDE1108AC)  
37.5  
ns  
(EDE1116AC)  
tFAW  
tCCD  
tWR  
50  
2
ns  
/CAS to /CAS command delay  
Write recovery time  
tCK  
ns  
15  
WR +  
RU(tRP/tCK)  
Auto precharge write recovery + precharge time  
tDAL  
tCK  
1, 9  
14  
Internal write to read command delay  
tWTR  
tRTP  
7.5  
ns  
Internal read to precharge command delay  
Exit self-refresh to a non-read command  
Exit self-refresh to a read command  
7.5  
ns  
tXSNR  
tXSRD  
tXP  
tRFC + 10  
ns  
200  
2
tCK  
tCK  
tCK  
Exit precharge power down to any non-read command  
Exit active power down to read command  
tXARD  
2
3
Exit active power down to read command  
(slow exit/low power mode)  
tXARDS  
6 AL  
tCK  
2, 3  
CKE minimum pulse width (high and low pulse width)  
Output impedance test driver delay  
tCKE  
tOIT  
3
tCK  
ns  
0
12  
12  
MRS command to ODT update delay  
tMOD  
tRFC  
0
ns  
Auto-refresh to active/auto-refresh command time  
127.5  
ns  
Average periodic refresh interval  
(0°C TC +85°C)  
tREFI  
7.8  
3.9  
µs  
µs  
ns  
(+85°C < TC +95°C)  
tREFI  
Minimum time clocks remains ON after CKE  
asynchronously drops low  
tDELAY  
tIS + tCK + tIH  
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which active power down exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.  
CK  
DQS  
/CK  
/DQS  
tIS  
tIH  
tIS  
tIH  
tDS tDH  
tDS tDH  
VDDQ  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
Input Waveform Timing 1 (tDS, tDH)  
Input Waveform Timing 2 (tIS, tIH)  
Data Sheet E0975E50 (Ver.5.0)  
17  
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