EDE1104ACSE, EDE1108ACSE, EDE1116ACSE
-8E
-6E
Speed bin
DDR2-800 (5-5-5)
DDR2-667 (5-5-5)
Parameter
Symbol
tRAP
min.
max.
min.
max.
Unit
ns
Notes
Active to auto-precharge delay
tRCD min.
tRCD min.
Active bank A to active bank B command
period
tRRD
7.5
7.5
ns
(EDE1104AC, EDE1108AC)
(EDE1116AC)
tRRD
tFAW
10
35
10
ns
ns
Four active window period
(EDE1104AC, EDE1108AC)
37.5
(EDE1116AC)
tFAW
tCCD
tWR
45
2
50
2
ns
/CAS to /CAS command delay
Write recovery time
nCK
ns
15
15
Auto precharge write recovery + precharge
time
WR + RU
(tRP/tCK(avg))
WR + RU
(tRP/tCK(avg))
tDAL
nCK
1, 9
14
Internal write to read command delay
tWTR
7.5
7.5
ns
Internal read to precharge command delay tRTP
7.5
7.5
ns
Exit self-refresh to a non-read command
Exit self-refresh to a read command
tXSNR
tRFC + 10
200
tRFC + 10
200
ns
tXSRD
tXP
nCK
Exit precharge power down to any non-read
command
2
2
nCK
nCK
nCK
Exit active power down to read command
tXARD
tXARDS
2
2
3
Exit active power down to read command
(slow exit/low power mode)
8 − AL
7 − AL
2, 3
CKE minimum pulse width (high and low
pulse width)
tCKE
3
3
nCK
Output impedance test driver delay
MRS command to ODT update delay
tOIT
0
0
12
12
0
0
12
12
ns
ns
tMOD
Auto-refresh to active/auto-refresh
command time
tRFC
127.5
127.5
ns
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
tREFI
7.8
3.9
7.8
3.9
µs
µs
ns
(+85°C < TC ≤ +95°C)
tREFI
Minimum time clocks remains ON after CKE
asynchronously drops low
tIS + tCK(avg)
+ tIH
tIS + tCK(avg)
+ tIH
tDELAY
Data Sheet E0975E50 (Ver.5.0)
15
ELPIDA [ ELPIDA MEMORY ]
