EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Burst Write Command [WRIT]
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is defined by a read
latency (RL) minus one and is equal to (AL + CL −1). A data strobe signal (DQS) should be driven low (preamble)
one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge
of the DQS following the preamble. The tDQSS specification must be satisfied for write cycles. The subsequent
burst bit data are issued on successive edges of the DQS until the burst length of 4 is completed. When the burst
has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst
write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery
time (tWR).
T0
T1
T2
T3
T4
T5
T6
T7
T9
/CK
CK
WRIT
NOP
PRE
NOP
Command
ACT
≤ tDQSS
DQS, /DQS
DQ
WL = RL –1 = 2
≥tWR
≥tRP
in0
in1
in2
in3
Completion of
the burst write
Burst Write Operation (RL = 3, WL = 2, BL = 4 tWR = 2 (AL=0, CL=3))
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
/CK
CK
WRIT
NOP
NOP
ACT
Command
PRE
≤ tDQSS
DQS, /DQS
DQ
≥tWR
≥tRP
WL = RL –1 = 2
in0
in1
in2
in3
in4
in5
in6
in7
Completion of
the burst write
Burst Write Operation (RL = 3, WL = 2, BL = 8 (AL=0, CL=3))
Data Sheet E0852E50 (Ver. 5.0)
58
ELPIDA [ ELPIDA MEMORY ]
