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EDD2516AKTA-6B-E 参数 Datasheet PDF下载

EDD2516AKTA-6B-E图片预览
型号: EDD2516AKTA-6B-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M比特DDR SDRAM ( 16M字×16位) [256M bits DDR SDRAM (16M words x 16 bits)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 546 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD2516AKTA-E  
A Read command to the consecutive Write command interval with the BST command  
Destination row of the consecutive write  
command  
Bank  
Row address State  
address  
Operation  
Issue the BST command. tBSTW (tBSTZ) after the BST command, the  
1. Same  
2. Same  
3. Different  
Same  
Different  
Any  
ACTIVE  
consecutive write command can be issued.  
Precharge the bank to interrupt the preceding read operation. tRP after the  
precharge command, issue the ACT command. tRCD after the ACT command, the  
consecutive write command can be issued. See ‘A read command to the  
consecutive precharge interval’ section.  
Issue the BST command. tBSTW (tBSTZ) after the BST command, the  
consecutive write command can be issued.  
Precharge the bank independently of the preceding read operation. tRP after the  
precharge command, issue the ACT command. tRCD after the ACT command, the  
consecutive write command can be issued.  
ACTIVE  
IDLE  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
Command  
READ  
WRIT  
BST  
NOP  
NOP  
tBSTW (tBSTZ)  
DM  
tBSTZ (= CL)  
DQ  
out0 out1  
in0 in1 in2 in3  
High-Z  
DQS  
OUTPUT  
INPUT  
BL = 4  
CL = 2  
READ to WRITE Command Interval  
Data Sheet E0502E30 (Ver. 3.0)  
31  
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