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EDD1208ALTA-7A 参数 Datasheet PDF下载

EDD1208ALTA-7A图片预览
型号: EDD1208ALTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128 M位同步DRAM是双倍数据速率( 4 -银行, SSTL_2 ) [128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2)]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 78 页 / 1650 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1204ALTA, EDD1208ALTA, EDD1216ALTA  
5. Initialization  
The EDD12xxALTA is initialized in the power-on sequence according to the following.  
(1) Power must first be applied to VDD, then VDDQ, and finally to VREF. VTT must be applied.  
(2) Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS  
output will be in Hi-Z state.  
(3) To stabilize internal circuits, when power is applied a 100 µs or longer pause must precede any signal toggling.  
(4) After the pause, all banks must be precharged using precharge command. The precharge all banks command is  
convenient.  
(5) EMRS command must be performed to enable or disable DLL. Then MRS command must be applied to reset  
DLL. After this MRS command additional 200 cycles are required before read command.  
(6) All banks must be precharged using precharge command again. Then two or more CBR (auto) refresh command  
must be performed.  
(7) After the refresh the mode register can be programmed by MRS command.  
Case 1: MRS after the REF  
Min. 200 cycles before Read command  
t
MRD  
t
MRD  
tRP  
t
RFC  
t
RFC  
tMRD  
CLK  
CKE  
Any  
Command  
PALL  
EMRS  
MRS  
PALL  
REF  
MRS  
REF  
Command  
DLL reset  
DLL  
enable / disable  
Minimum 2 REF cycles must be performed.  
Remark Two refresh commands may be follow the first MRS command.  
21  
Preliminary Data Sheet E0136E30  
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