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EBE51UD8AGWA 参数 Datasheet PDF下载

EBE51UD8AGWA图片预览
型号: EBE51UD8AGWA
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB无缓冲DDR2 SDRAM DIMM [512MB Unbuffered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 25 页 / 234 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE51UD8AGWA  
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2 667]  
(DDR2 SDRAM Component Specification)  
-6E  
667  
min.  
5
Frequency (Mbps)  
Parameter  
Symbol  
CL  
max.  
5
Unit  
tCK  
ns  
Notes  
/CAS latency  
Active to read or write command delay  
Precharge command period  
Active to active/auto refresh command time  
DQ output access time from CK, /CK  
DQS output access time from CK, /CK  
CK high-level width  
tRCD  
tRP  
15  
15  
ns  
tRC  
60  
ns  
tAC  
450  
400  
0.45  
0.45  
+450  
+400  
0.55  
0.55  
ps  
tDQSCK  
tCH  
ps  
tCK  
tCK  
CK low-level width  
tCL  
min.  
(tCL, tCH)  
CK half period  
tHP  
ps  
Clock cycle time  
tCK  
3000  
175  
100  
0.6  
8000  
ps  
DQ and DM input hold time  
DQ and DM input setup time  
tDH (base)  
tDS (base)  
ps  
5
4
ps  
Control and Address input pulse width for each input tIPW  
tCK  
tCK  
ps  
DQ and DM input pulse width for each input  
Data-out high-impedance time from CK,/CK  
Data-out low-impedance time from CK,/CK  
DQS-DQ skew for DQS and associated DQ signals  
DQ hold skew factor  
tDIPW  
tHZ  
0.35  
tAC max.  
tAC max.  
240  
tLZ  
tAC min.  
ps  
tDQSQ  
tQHS  
tQH  
ps  
340  
ps  
DQ/DQS output hold time from DQS  
tHP – tQHS  
ps  
DQS latching rising transitions to associated clock  
edges  
tDQSS  
0.25  
+0.25  
tCK  
DQS input high pulse width  
DQS input low pulse width  
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
tDQSH  
tDQSL  
tDSS  
0.35  
0.35  
0.2  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
ps  
tDSH  
0.2  
tMRD  
2
tWPST  
tWPRE  
tIH (base)  
tIS (base)  
tRPRE  
tRPST  
tRAS  
0.4  
0.6  
Write preamble  
0.35  
275  
200  
0.9  
Address and control input hold time  
Address and control input setup time  
Read preamble  
5
4
ps  
1.1  
tCK  
tCK  
ns  
Read postamble  
0.4  
0.6  
Active to precharge command  
Active to auto-precharge delay  
Active bank A to active bank B command period  
Write recovery time  
45  
70000  
tRAP  
tRCD min.  
7.5  
ns  
tRRD  
ns  
tWR  
15  
ns  
(tWR/tCK)+  
(tRP/tCK)  
Auto precharge write recovery + precharge time  
tDAL  
tCK  
1
Internal write to read command delay  
tWTR  
tRTP  
7.5  
ns  
ns  
Internal read to precharge command delay  
7.5  
Preliminary Data Sheet E0921E10 (Ver. 1.0)  
16  
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