欢迎访问ic37.com |
会员登录 免费注册
发布采购

EBD52UC8AKDA-6B-E 参数 Datasheet PDF下载

EBD52UC8AKDA-6B-E图片预览
型号: EBD52UC8AKDA-6B-E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 64MX64, 0.7ns, CMOS, SODIMM-200]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 19 页 / 224 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第11页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第12页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第13页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第14页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第15页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第16页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第17页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第19页  
EBD52UC8AKDA  
CAUTION FOR HANDLING MEMORY MODULES  
When handling or inserting memory modules, be sure not to touch any components on the modules, such as  
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on  
these components to prevent damaging them.  
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,  
which would be electrical defects.  
When re-packing memory modules, be sure the modules are not touching each other.  
Modules in contact with other modules may cause excessive mechanical stress, which may damage the  
modules.  
MDE0202  
NOTES FOR CMOS DEVICES  
PRECAUTION AGAINST ESD FOR MOS DEVICES  
1
Exposing the MOS devices to a strong electric field can cause destruction of the gate  
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop  
generation of static electricity as much as possible, and quickly dissipate it, when once  
it has occurred. Environmental control must be adequate. When it is dry, humidifier  
should be used. It is recommended to avoid using insulators that easily build static  
electricity. MOS devices must be stored and transported in an anti-static container,  
static shielding bag or conductive material. All test and measurement tools including  
work bench and floor should be grounded. The operator should be grounded using  
wrist strap. MOS devices must not be touched with bare hands. Similar precautions  
need to be taken for PW boards with semiconductor MOS devices on it.  
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES  
No connection for CMOS devices input pins can be a cause of malfunction. If no  
connection is provided to the input pins, it is possible that an internal input level may be  
generated due to noise, etc., hence causing malfunction. CMOS devices behave  
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed  
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected  
to VDD or GND with a resistor, if it is considered to have a possibility of being an output  
pin. The unused pins must be handled in accordance with the related specifications.  
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES  
Power-on does not necessarily define initial status of MOS devices. Production process  
of MOS does not define the initial operation status of the device. Immediately after the  
power source is turned ON, the MOS devices with reset function have not yet been  
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or  
contents of registers. MOS devices are not initialized until the reset signal is received.  
Reset operation must be executed immediately after power-on for MOS devices having  
reset function.  
CME0107  
Preliminary Data Sheet E0367E20 (Ver. 2.0)  
18  
 复制成功!