欢迎访问ic37.com |
会员登录 免费注册
发布采购

EBD52UC8AKDA-6B-E 参数 Datasheet PDF下载

EBD52UC8AKDA-6B-E图片预览
型号: EBD52UC8AKDA-6B-E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 64MX64, 0.7ns, CMOS, SODIMM-200]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 19 页 / 224 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第9页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第10页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第11页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第12页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第14页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第15页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第16页浏览型号EBD52UC8AKDA-6B-E的Datasheet PDF文件第17页  
EBD52UC8AKDA  
-6B  
-7A  
-7B  
Parameter  
Symbol  
tMRD  
min.  
max.  
min.  
max.  
min.  
max  
Unit  
tCK  
Notes  
Mode register set command cycle  
time  
2
2
2
Active to Precharge command  
tRAS  
tRC  
42  
60  
120000 45  
120000 45  
120000 ns  
period  
Active to Active/Auto refresh  
command period  
65  
65  
ns  
Auto refresh to Active/Auto refresh  
tRFC  
tRCD  
tRP  
72  
18  
18  
75  
20  
20  
75  
20  
20  
ns  
ns  
ns  
command period  
Active to Read/Write delay  
Precharge to active command  
period  
Active to Autoprecharge delay  
Active to active command period  
Write recovery time  
tRAP  
tRRD  
tWR  
tRCD min.  
tRCD min.  
tRCD min.  
ns  
ns  
ns  
12  
15  
15  
15  
15  
15  
Auto precharge write recovery and  
precharge time  
(tWR/tCK)+  
(tRP/tCK)  
(tWR/tCK)+  
(tRP/tCK)  
(tWR/tCK)+  
(tRP/tCK)  
tDAL  
tCK  
13  
Internal write to Read command  
delay  
Average periodic refresh interval  
tWTR  
tREF  
1
1
1
tCK  
µs  
7.8  
7.8  
7.8  
Notes: 1. All the AC parameters listed in this data sheet is component specifications. For AC testing conditions,  
refer to the corresponding component data sheet.  
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal  
transition is defined to occur when the signal level crossing VTT.  
3. The timing reference level is VTT.  
4. Output valid window is defined to be the period between two successive transition of data out or DQS  
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.  
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The  
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage  
level, but specify when the device output stops driving.  
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This  
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins  
driving.  
7. Input valid windows is defined to be the period between two successive transition of data input or DQS  
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.  
8. The timing reference level is VREF.  
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific  
reference voltage to judge this transition is not given.  
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not  
assured.  
11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these  
values are 10% of tCK.  
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than  
0.4V/400 cycle.  
13. tDAL = (tWR/tCK)+(tRP/tCK)  
For each of the terms above, if not already an integer, round to the next highest integer.  
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,  
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)  
tDAL = 5 clocks  
Preliminary Data Sheet E0367E20 (Ver. 2.0)  
13  
 复制成功!