Dual N-channel MOSFET
ELM34802AA-N
Capacitance Characteristics
Gate-Charge Characteristics
400
300
200
100
0
10
8
15V
I
D
= 4.5A
VDS= 5V
10V
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
V
DS,Drain to Source Voltage(V)
Q
g
(nC)
Single Pulse Maximum Power Dissipation.
Maximum Safe Operating Area.
5
4
30
1
0
0
u
s
10
T
I
M
I
L
)
N
O
(
3
S
1
m
D
s
R
1
3
2
1
0
0
m
1
s
1
0
0
m
s
0.3
0.1
1
C
s
D
VGS= 10V
V
GS= 10V
SINGLE PULSE
R�JA=125°C/W
TA=25°C
SINGLE PULSE
R�JA=125°C/W
TA=25°C
0.03
0.01
0.01
0.1
1
10
100
300
0.1
0.3
1
3
10
30
50
Single pulse time(SEC)
VDS, Drain-Source Voltage(V)
Transient Thermal Response Curve.
1
D=0.5
0.2
0.5
0.2
0.1
t1
0.1
t2
0.05
R�JA(t) = r(t) * R�ꢀꢁ
R�JA=125°C/W
0.05
0.02
0.01
Single Pulse
T
J
-T
A
=P*R�JA(t)
/ t
0.02
0.01
Duty Cycle, D= t
1
2
0.0001
0.001
0.01
0.1
1
10
100
300
t1 Time(Sec)
4 - 4
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