Dual N-channel MOSFET
ELM34802AA-N
■General description
■Features
ELM34802AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=30V
• Id=4.5A
• Rds(on) < 68mΩ (Vgs=10V)
• Rds(on) < 98mΩ (Vgs=5V)
■Maximum absolute ratings
Parameter
Symbol
Limit
30
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±
20
V
Ta=25°C
Ta=70°C
4.5
3.6
Continuous drain current
Pulsed drain current
Id
Idm
A
A
20
3
Ta=25°C
Ta=70°C
2.0
Power dissipation
Pd
W
°C
1.3
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
62.5
Unit
°C/W
Note
Maximum junction-to-ambient
Steady-state
■Pin configuration
■Circuit
D1
D2
SOP-8(TOP VIEW)
Pin No.
Pin name
SOURCE1
1
2
3
4
5
6
7
8
1
2
3
4
8
7
6
5
GATE1
SOURCE2
GATE2
G1
G2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
S1
S2
4 - 1
ELM-TECH [ ELM Technology Corporation ]
