Dual N-channel MOSFET
ELM34802AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
30
V
Vds=24V, Vgs=0V
Idss
1
Zero gate voltage drain current
μA
Vds=20V, Vgs=0V, Tj=55°C
10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 20V
100 nA
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Vgs=10V, Id=4.5A
1.0
20
1.5
3.0
V
A
1
1
55
75
68
98
mΩ
mΩ
S
Static drain-source on-resistance Rds(on)
Vgs=5V, Id=3.5A
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=5V, Id=4.5A
Vsd If=1A, Vgs=0V
4.5
1
1
1.2
V
Ciss
200
40
240
55
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=15V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
20
30
Qg
6.5
1.2
1.6
7
8.5
1.8
2.4
11
nC
nC
nC
ns
2
2
2
2
2
2
2
Gate-source charge
Qgs Vgs=10V, Vds=15V, Id=4.5A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=10V, Vds=15V, Id≈1A
12
12
7
18
18
11
ns
Turn-off delay time
td(off) Rl=15Ω, Rgen=6Ω
tf
ns
Turn-off fall time
ns
Body diode reverse recovery time
trr
If=1A, dl/dt=100A/μs
40
80
ns
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
ELM-TECH [ ELM Technology Corporation ]
