Dual N-channel MOSFET
ELM34802AA-N
■Typical electrical and thermal characteristics
On-Resistance Variation with
Drain Current and Gate Voltage.
On-Region Characteristics.
2
10
V
GS= 10V
6.0V
4.5V
1.8
1.6
1.4
1.2
1
8
V
GS= 4.0V
4.0V
6
4
2
4.5V
5.0V
3.5V
3.0V
6.0V
7.0V
10V
0.8
0
0
2
4
6
8
10
0
1
2
3
4
ID, Drain Current(A)
VDS, Drain-Source Voltage(V)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
0.275
1.6
1.4
1.2
1
I = 4.5A
D
V
GS= 10V
ID=3A
0.225
0.175
0.125
0.075
0.025
T
A
= 125°C
T
A
= 25°C
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
GS, Gate to Source Voltage(V)
TJ, Junction Temperature(°C)
Body Diode Forword Voltage Variation with
Source Current and Temperature.
Transfer Characteristics.
10
1
10
8
VGS= 0V
V
DS= 5V
125°C
TA= -55°C
TA= 125°C
25°C
-55°C
25°C
0.1
0.01
6
4
2
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
6
VSD, Body Diode Forword Voltage(V)
V
GS, Gate to Source Voltage(V)
4 - 3
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