GP800DCS18
1600
1400
1200
1000
800
2000
1800
1600
1400
Tj = 25˚C
1200
1000
Tj = 125˚C
800
600
600
400
Tcase = 125˚C
Vge = ±15V
Rg(min) = 2.2Ω
400
200
0
200
0
0
2.0
Foward voltage, VF - (V)
0.5
1.0
1.5
2.5
3.0
3.5
2000
1200
0
400
800
1600
Collector-emitter voltage, Vce - (V)
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
10000
1000
100
10
100
Diode
IC max. (single pulse)
Transistor
50
µ
10
s
100
t
µ
p
= 1ms
s
1
Conditions:
T
vj = 125˚C, Tcase = 50˚C
1
0.1
10000
1
10
100
1000
10000
1
10
100
1000
Pulse width, tp - (ms)
Collector-emitter voltage, Vce - (V)
Fig.9 Forward bias safe operating area
Fig.10 Transient thermal impedance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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