GP800DCS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Parameter
Test Conditions
VGE = 0V, VCE = VCES
Min.
Typ.
Max. Units
Symbol
Collector cut-off current
-
-
-
1
25
4
mA
mA
µA
V
ICES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 40mA, VGE = VCE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, , Tcase = 125˚C
DC
-
-
Gate leakage current
-
IGES
5.5
3.5
4.3
-
Gate threshold voltage
4.5
6.5
4
VGE(TH)
VCE(sat)
Collector-emitter saturation voltage
-
-
-
-
-
-
-
-
V
5
V
Diode forward current
800
1600
2.5
2.6
-
A
IF
-
IFM
VF
Diode maximum forward current
Diode forward voltage
tp = 1ms
A
2.2
2.3
90
20
IF = 800A
V
IF = 800A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
V
Cies
LM
Input capacitance
Module inductance
nF
nH
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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