GP800DCS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case = 25˚C unless stated otherwise
Symbol
VCES
VGES
IC
Parameter
Collector-emitter voltage
Gate-emitter voltage
Test Conditions
Max. Units
VGE = 0V
1800
±20
V
V
-
Continuous collector current
Peak collector current
Tcase = 55˚C
800
A
IC(PK)
Pmax
Visol
1ms, Tcase = 100˚C
1600
6000
4000
A
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz
W
V
THERMAL AND MECHANICAL RATINGS
Min.
Parameter
Test Conditions
Continuous dissipation -
junction to case
Max. Units
Symbol
-
-
-
Rth(j-c)
Thermal resistance - transistor (per arm)
21
40
8
˚C/kW
˚C/kW
˚C/kW
Rth(j-c)
Rth(c-h)
Tj
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
-
Junction temperature
Transistor
Diode
150
125
125
5
˚C
˚C
-
–40
Tstg
-
Storage temperature range
Screw torque
-
˚C
-
-
-
Mounting - M6
Nm
Nm
Nm
Electrical connections - M4
Electrical connections - M8
2
10
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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