欢迎访问ic37.com |
会员登录 免费注册
发布采购

GP800DCS18 参数 Datasheet PDF下载

GP800DCS18图片预览
型号: GP800DCS18
PDF下载: 下载PDF文件 查看货源
内容描述: 斩波开关IGBT模块 [Chopper Switch IGBT Module]
分类和应用: 晶体开关晶体管电动机控制双极性晶体管局域网
文件页数/大小: 10 页 / 172 K
品牌: DYNEX [ Dynex Semiconductor ]
 浏览型号GP800DCS18的Datasheet PDF文件第1页浏览型号GP800DCS18的Datasheet PDF文件第2页浏览型号GP800DCS18的Datasheet PDF文件第3页浏览型号GP800DCS18的Datasheet PDF文件第5页浏览型号GP800DCS18的Datasheet PDF文件第6页浏览型号GP800DCS18的Datasheet PDF文件第7页浏览型号GP800DCS18的Datasheet PDF文件第8页浏览型号GP800DCS18的Datasheet PDF文件第9页  
GP800DCS18  
ELECTRICAL CHARACTERISTICS  
Tcase = 25˚C unless stated otherwise  
Min.  
Typ.  
1000  
200  
200  
300  
200  
200  
180  
450  
120  
Symbol  
td(off)  
tf  
Parameter  
Turn-off delay time  
Test Conditions  
IC = 800A  
Max. Units  
-
-
-
-
-
-
-
-
-
1200  
300  
300  
400  
300  
300  
240  
-
ns  
ns  
mJ  
ns  
ns  
mJ  
µC  
A
Fall time  
VGE = ±15V  
EOFF  
td(on)  
tr  
Turn-off energy loss  
Turn-on delay time  
Rise time  
VCE = 900V  
RG(ON) = RG(OFF) = 2.2Ω  
L ~ 100nH  
EON  
Qrr  
Turn-on energy loss  
Diode reverse recovery charge  
Diode reverse current  
Diode reverse recovery energy  
IF = 800A, VR = 50% VCES  
,
Irr  
dIF/dt = 3500A/µs  
EREC  
-
mJ  
Tcase = 125˚C unless stated otherwise  
Parameter  
Turn-off delay time  
Test Conditions  
IC = 800A  
Min.  
Typ.  
1200  
250  
300  
400  
250  
350  
300  
525  
190  
Max. Units  
Symbol  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
1400  
350  
400  
550  
350  
450  
400  
-
ns  
ns  
mJ  
ns  
ns  
mJ  
µC  
A
Fall time  
VGE = ±15V  
Turn-off energy loss  
Turn-on delay time  
Rise time  
VCE = 900V  
EOFF  
td(on)  
tr  
RG(ON) = RG(OFF) = 2.2Ω  
L ~ 100nH  
Turn-on energy loss  
Diode reverse recovery charge  
Diode reverse current  
Diode reverse recovery energy  
EON  
Qrr  
IF = 800A, VR = 50% VCES  
,
dIF/dt = 3000A/µs  
Irr  
EREC  
-
mJ  
4/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com