ZXMS6002G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
V
60
V
DS
Drain-source voltage for short circuit protection V =5V
V
V
36
20
V
V
IN
DS(SC)
DS(SC)
Drain-source voltage for short circuit protection
V =10V
IN
Continuous input voltage
Peak input voltage
V
V
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
V
V
IN
IN
Operating temperature range
Storage temperature range
T ,
°C
°C
W
j
T
stg
(a)
P
Power dissipation @ T
=25°C
D
amb
(a)
I
1.6
1.4
A
A
Continuous drain current @ V =10V; T
=25°C
D
IN
amb
(a)
I
Continuous drain current @ V =5V; T
=25°C
D
IN
amb
(a)
I
I
3
A
A
Continuous source current (body diode)
S
(b)
4.7
Pulsed source current (body diode)
S
Unclamped single pulse inductive energy
Load dump protection
E
550
80
mJ
V
AS
LoadDump
V
Electrostatic discharge (human body model)
V
4000
V
ESD
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
E
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
50
°C/W
Junction to ambient
⍜JA
(b)
R
28
°C/W
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b)For a device surface mounted on FR4 board as (a) and measured at t<=10s.
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
DIODES [ DIODES INCORPORATED ]
