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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Continuous drain-source voltage  
V
60  
V
DS  
Drain-source voltage for short circuit protection V =5V  
V
V
36  
20  
V
V
IN  
DS(SC)  
DS(SC)  
Drain-source voltage for short circuit protection  
V =10V  
IN  
Continuous input voltage  
Peak input voltage  
V
V
-0.2 ... +10  
-0.2 ... +20  
-40 to +150  
-55 to +150  
2.5  
V
V
IN  
IN  
Operating temperature range  
Storage temperature range  
T ,  
°C  
°C  
W
j
T
stg  
(a)  
P
Power dissipation @ T  
=25°C  
D
amb  
(a)  
I
1.6  
1.4  
A
A
Continuous drain current @ V =10V; T  
=25°C  
D
IN  
amb  
(a)  
I
Continuous drain current @ V =5V; T  
=25°C  
D
IN  
amb  
(a)  
I
I
3
A
A
Continuous source current (body diode)  
S
(b)  
4.7  
Pulsed source current (body diode)  
S
Unclamped single pulse inductive energy  
Load dump protection  
E
550  
80  
mJ  
V
AS  
LoadDump  
V
Electrostatic discharge (human body model)  
V
4000  
V
ESD  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
E
40/150/56  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
50  
°C/W  
Junction to ambient  
JA  
(b)  
R
28  
°C/W  
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight  
copper.  
(b)For a device surface mounted on FR4 board as (a) and measured at t<=10s.  
Issue 3 - June 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com