ZXMS6002G
60V N-Channel self protected enhancement mode
IntelliFET™ MOSFET with status indication
Summary
Continuous drain source voltage
On-state resistance
V
= 60V
DS
500m⍀
1.4A
Nominal load current (V = 5V)
IN
Clamping energy
550mJ
Description
Self protected low side MOSFET. Monolithic
over temperature, over current, over voltage
(active clamp) and ESD protected logic level
functionality. Intended as a general purpose
switch, with status indication.
Features
S
•
•
•
•
•
•
•
Status pin (analog status indication)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Status
IN
D
Top view
Input protection (ESD)
Load dump protection (actively protects
load)
Note: The tab is connected to the drain pin and
must be electrically isolated from the source
pin. Connection of significant copper to the tab
is recommended for best thermal performance.
•
•
Logic level input
High continuous current rating
Ordering information
Device
Part mark
ZXMS6002
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6002GTA
7
12 embossed
1000
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
DIODES [ DIODES INCORPORATED ]
