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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G  
60V N-Channel self protected enhancement mode  
IntelliFET™ MOSFET with status indication  
Summary  
Continuous drain source voltage  
On-state resistance  
V
= 60V  
DS  
500m  
1.4A  
Nominal load current (V = 5V)  
IN  
Clamping energy  
550mJ  
Description  
Self protected low side MOSFET. Monolithic  
over temperature, over current, over voltage  
(active clamp) and ESD protected logic level  
functionality. Intended as a general purpose  
switch, with status indication.  
Features  
S
Status pin (analog status indication)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
Status  
IN  
D
Top view  
Input protection (ESD)  
Load dump protection (actively protects  
load)  
Note: The tab is connected to the drain pin and  
must be electrically isolated from the source  
pin. Connection of significant copper to the tab  
is recommended for best thermal performance.  
Logic level input  
High continuous current rating  
Ordering information  
Device  
Part mark  
ZXMS6002  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMS6002GTA  
7
12 embossed  
1000  
Issue 3 - June 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com