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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit Conditions  
Status flag  
Normal operation  
V
V
V
V
V
V
4.95  
2.5  
V
V
V
V
V
V
V
V
V
V
V
V
= 5V  
STATUS  
STATUS  
STATUS  
STATUS  
STATUS  
STATUS  
IN  
IN  
IN  
IN  
IN  
IN  
Current limit operating  
Thermal shutdown activated  
Normal operation  
= 5V  
0.2  
1
= 5V  
8.0  
= 10V  
= 10V  
= 10V  
Current limit operation  
Thermal shutdown activated  
3.0  
0.35  
1
1
Inverse diode  
Source drain voltage  
V
V
V =0V, -I =1.4A,  
IN D  
SD  
NOTES:  
(*) Protection features may operate outside spec for VIN<4.5V.  
(†) The drain current is limited to a reduced value when Vds exceeds a safe level  
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed  
for continuous, repetitive operation.  
Issue 3 - June 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com