ZXMS6002G
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Static characteristics
Drain-source clamp voltage
V
60
70
0.1
3
75
3
V
A
A
V
I =10mA
D
DS(AZ)
Off state drain current
Off state drain current
I
I
V
V
V
=12V, V =0V
IN
DSS
DS
DS
DS
15
=32V, V =0V
DSS
IN
(*)
V
1
2.1
0.7
1.5
4
=V , I =1mA
Input threshold voltage
IN(th)
GS
D
Input current
Input current
Input current
I
I
I
1.2
2.7
7
mA V =+5V
IN
IN
mA V =+7V
IN
IN
IN
mA V =+10V
IN
Static drain-source on-state
resistance
R
R
I
520
675
m⍀ V =5V, I =0.7A
IN D
DS(on)
Static drain-source on-state
resistance
385
500
m⍀ V =10V, I =0.7A
IN D
DS(on)
(†)
0.7
1.0
1.0
1.8
1.5
2.3
A
A
V =5V, V >5V
IN DS
Current limit
D(LIM)
D(LIM)
(†)
I
V =10V, V >5V
IN DS
Current limit
Dynamic characteristics
Turn-off time (V to 90% I )
t
13
8
20
20
10
s
R =22⍀, V =10V to
L IN
IN
D
off
0V, V =12V
DD
Slew rate on (70 to 50% V
)
-dV /dt
V/s R =22⍀, V =0 to
L IN
DD
DS
on
10V, V =12V
DD
Slew rate off (50 to 70% V ) DV /dt
3.2
V/s R =22⍀, V =10V to
L IN
DD
DS
on
0V, V =12V
DD
(‡)
Protection functions
Required input voltage for
over temperature protection
V
4.5
V
PROT
Thermal overload trip
temperature
T
E
E
150
175
1
°C
JT
Thermal hysteresis
°C
Unclamped single pulse
inductive energy
550
200
mJ
I
)=0.7A,
AS
AS
D(ISO
V
=32V
DD
T =25°C
j
Unclamped single pulse
inductive energy
mJ
I
)=0.7A,
D(ISO
V
=32V
DD
T =150°C
j
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
6
www.zetex.com
DIODES [ DIODES INCORPORATED ]
