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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit Conditions  
Static characteristics  
Drain-source clamp voltage  
V
60  
70  
0.1  
3
75  
3
V
A  
A  
V
I =10mA  
D
DS(AZ)  
Off state drain current  
Off state drain current  
I
I
V
V
V
=12V, V =0V  
IN  
DSS  
DS  
DS  
DS  
15  
=32V, V =0V  
DSS  
IN  
(*)  
V
1
2.1  
0.7  
1.5  
4
=V , I =1mA  
Input threshold voltage  
IN(th)  
GS  
D
Input current  
Input current  
Input current  
I
I
I
1.2  
2.7  
7
mA V =+5V  
IN  
IN  
mA V =+7V  
IN  
IN  
IN  
mA V =+10V  
IN  
Static drain-source on-state  
resistance  
R
R
I
520  
675  
mV =5V, I =0.7A  
IN D  
DS(on)  
Static drain-source on-state  
resistance  
385  
500  
mV =10V, I =0.7A  
IN D  
DS(on)  
(†)  
0.7  
1.0  
1.0  
1.8  
1.5  
2.3  
A
A
V =5V, V >5V  
IN DS  
Current limit  
D(LIM)  
D(LIM)  
(†)  
I
V =10V, V >5V  
IN DS  
Current limit  
Dynamic characteristics  
Turn-off time (V to 90% I )  
t
13  
8
20  
20  
10  
s  
R =22, V =10V to  
L IN  
IN  
D
off  
0V, V =12V  
DD  
Slew rate on (70 to 50% V  
)
-dV /dt  
V/s R =22, V =0 to  
L IN  
DD  
DS  
on  
10V, V =12V  
DD  
Slew rate off (50 to 70% V ) DV /dt  
3.2  
V/s R =22, V =10V to  
L IN  
DD  
DS  
on  
0V, V =12V  
DD  
(‡)  
Protection functions  
Required input voltage for  
over temperature protection  
V
4.5  
V
PROT  
Thermal overload trip  
temperature  
T
E
E
150  
175  
1
°C  
JT  
Thermal hysteresis  
°C  
Unclamped single pulse  
inductive energy  
550  
200  
mJ  
I
)=0.7A,  
AS  
AS  
D(ISO  
V
=32V  
DD  
T =25°C  
j
Unclamped single pulse  
inductive energy  
mJ  
I
)=0.7A,  
D(ISO  
V
=32V  
DD  
T =150°C  
j
Issue 3 - June 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com