MOSFET TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.5
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DTM4483S
I
D
= 3.6 A
1
T
J
= 150
°C
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.4
I
S
- Source Current (A)
0.3
0.1
0.2
T
J
= 125
°C
0.01
0.1
0.001
0.0
T
J
= 25
°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
- Source-to-Drain Voltage (V)
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
0.6
50
On-Resistance vs. Gate-to-Source Voltage
0.4
I
D
= 250 μA
40
I
D
= 5 mA
Power (W)
V
GS(th)
- Variance (V)
0.2
30
0
20
- 0.2
10
- 0.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
10
I
D
- Drain Current (A)
I
D
Limited
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
Limited by R
DS(on)
*
100 ms
0.1
T
C
= 25
°C
Single Pulse
0.01
0.01
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
5
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