MOSFET TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
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DTM4483S
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I
D
- Drain Current (A)
3
2
1
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
3.5
1.25
2.8
1.00
Power (W)
1.4
Power (W)
2.1
0.75
0.50
0.7
0.25
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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