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MOSFET SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2 A, V
GS
= 0 V
- 0.83
12
6
8
4
T
C
= 25 °C
- 4.6
- 20
- 1.2
24
12
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 3
I
D
- 5 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 3
I
D
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
1.5
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 5 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
350
75
63
9
4.6
1.3
2.1
7.3
28
73
12
8
6
9
12
6
14.5
50
140
24
16
12
18
24
12
ns
14
7
nC
pF
V
DS
V
DS/TJ
V
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 75 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 3.6 A
V
GS
= - 4.5 V, I
D
= - 2.8 A
V
DS
= - 15 V, I
D
= - 3.6 A
-5
0.055
0.092
6.5
0.068
0.110
-1
- 30
- 20
3.9
- 1.8
- 2.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTM4483S
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
2
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